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US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Non-volatile memory device" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,830, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Non-volatile memory device" was invented by Ku... Read More


US Patent Issued to TOWER PARTNERS SEMICONDUCTOR, TOWER SEMICONDUCTOR on Nov. 3 for "Semiconductor memory device" (Japanese, Israeli Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,831, issued on Nov. 3, was assigned to TOWER PARTNERS SEMICONDUCTOR Co. LTD. (Uozu City, Japan) and TOWER SEMICONDUCTOR LTD. (Migdal Haemek, ... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Memory array structures" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,832, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory array structures" was invented by Jae Kyu Choi (Boise,... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Memory array structures and methods of their fabrication" (American, Italian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,833, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory array structures and methods of their fabrication" was... Read More


US Patent Issued to Micron Technology on Nov. 3 for "Memory device with segmented SGD drain" (Idaho Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,834, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device with segmented SGD drain" was invented by Darwi... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Memory device and operating method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,835, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Memory device and operating metho... Read More


US Patent Issued to Sandisk Technologies on Nov. 3 for "Die by die trimming of drain-side select gate threshold voltage to reduce cumulative read disturb" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,836, issued on Nov. 3, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Die by die trimming of drain-side select gate threshol... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Memory device and operating method thereof" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,837, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device and operating method thereof" wa... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Nonvolatile memory devices, storage devices including the same, and methods of operating the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,838, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Nonvolatile memory devices, storage devices in... Read More


US Patent Issued to Kioxia on Nov. 3 for "Memory system" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,839, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo). "Memory system" was invented by Tsukasa Tokutomi (Kamakura, Japan), Masanobu Sh... Read More